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UNISONIC TECHNOLOGIES CO., LTD 15N60
15 Amps, 600 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 15N60 is an N-channel mode Power FET using UTC's advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 15N60 is universally applied in active power factor correction and high efficient switched mode power supplies.
Preliminary
Power MOSFET
FEATURES
* 15A, 600V, RDS(ON)=0.44 @ VGS=10V * Typically 23.6pF low CRSS * High switching speed * Improved dv/dt capability
SYMBOL
ORDERING INFORMATION
Ordering Number Lead Free Halogen Free 15N60L-T47-T 15N60G-T47-T Note: Pin Assignment: G: Gate D: Drain Package TO-247 S: Source 1 G Pin Assignment 2 3 D S Packing Tube
www.unisonic.com.tw Copyright (c) 2010 Unisonic Technologies Co., Ltd
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PARAMETER Drain to Source Voltage Gate to Source Voltage Avalanche Current (Note 1)
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25C, unless otherwise specified)
SYMBOL RATINGS UNIT VDSS 600 V VGSS 30 V IAR 15 A Continuous ID 15 A Continuous Drain Current 60 A Pulsed (Note 1) IDM Single Pulsed (Note 2) EAS 637 mJ Avalanche Energy Repetitive (Note 1) EAR 25.0 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Power Dissipation PD 312 W Junction Temperature TJ +150 C Storage Temperature TSTG -55 ~ +150 C Note : Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER Junction to Ambient Junction to Case SYMBOL JA JC RATINGS 40 0.4 UNIT C/W C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25C, unless otherwise specified)
SYMBOL BVDSS TEST CONDITIONS MIN 600 0.65 1 10 +100 -100 3.0 0.36 19.2 5.0 0.44 TYP MAX UNIT V V/C A A nA nA V S pF pF pF nC nC nC ns ns ns ns A A V ns C
VGS=0V, ID=250A, TJ=25C ID=250A, Breakdown Voltage Temperature Coefficient BVDSS/TJ Referenced to 25C VDS=600V, VGS=0V Drain-Source Leakage Current IDSS VDS=520V, TC=125C Forward VGS=+30V, VDS=0V Gate- Source Leakage Current IGSS Reverse VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250A Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=7.5A Forward Transconductance gFS VDS=40V, ID=7.5A (Note 4) DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V,VGS=0V,f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=520V, VGS=10V, Gate-Source Charge QGS ID=15A (Note 4,5) Gate-Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=325V, ID=15A, RG=21.7 (Note 4,5) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS =15A, VGS=0V Body Diode Reverse Recovery Time tRR VGS=0V, IS=15A, dIF/dt=100A/s (Note 4) Body Diode Reverse Recovery Charge QRR Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=5.23mH, IAS=15A, VDD= 50V, RG=25, Starting TJ=25C 3. ISD 15A, di/dt 200A/s, VDD BVDSS, Starting TJ=25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature 6. Drain current limited by maximum junction temperature
2380 3095 295 385 23.6 35.5 48.5 14.0 21.2 65 125 105 65 63.0
140 260 220 140 15 60 1.4
496 5.69
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT RG
+ VDS L ISD
VGS
VDD Driver Same Type as DUT
dv/dt controlled by RG ISD controlled by pulse period
VGS (Driver)
D=
Gate Pulse Width Gate Pulse Period
10V
IFM, Body Diode Forward Current ISD (DUT) IRM Body Diode Reverse Current VDS (DUT) di/dt
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Gate Charge Test Circuit VGS QG
Preliminary
Power MOSFET
Gate Charge Waveforms
Same Type as DUT 12V 200nF 50k VGS DUT 3mA 300nF VDS
10V QGS
QGD
Charge
Unclamped Inductive Switching Test Circuit VDS RG ID
Unclamped Inductive Switching Waveforms EAS= 1 LIAS2 2 BVDSS L IAS ID(t) BVDSS BVDSS-VDD
10V tP DUT VDD VDD
VDS(t) Time
tP
www.unisonic.com.tw Copyright (c) 2010 Unisonic Technologies Co., Ltd
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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www.unisonic.com.tw
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